Researcher Directory | Aichi University of Education.


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Shimizu Hideki

  • Faculty:Creative Arts and SciencesPosition:Professor Emeritus
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Modified:04/18/2019

Profile

Assigned Class

  • Creative Arts and Sciences

Research Field

  • Science education
  • Applied physical properties/crystal engineering
  • Electron/electric material engineering
  • Keywords:Electronic and Electric Materials Engineering , Applied Physics of Proporty and Crystallography

Current Subject

  • Heteroepitaxial Growth of SiC on Si by Plasma-Assisted CVD
    Keywords:Silicon Carbide , Plasma , Heteroepitaxial

Academic Societies

Academic Societies
  • The Institute of Electrical Engineers of Japan
  • The Japan Society of Applied Physics
  • The Japan Society of Technology Education

Academic Background

Graduate School
  • Nagoya University , (Master's course , Department of Electrical Engineering , Graduate School, Division of Engineering) , 1979(Completed)
College
  • Nagoya Institute of Technology , (Depatrment of Electrical Engineering , Faculty of Engineering) , 1977(Graduated)
Degree
  • Master of Engineering , Nagoya University

Research Career

Research Career
  • 2017 - , Aichi University of Education Special Professor
  • 2002 - 2017 , Aichi University of Education Professor
  • 1986 - 2001 , Aichi University of Education Associate Professor
  • 1982 - 1986 , Aichi University of Education, Assistant
  • 1979 - 1982 , Toyohashi University of Technology
Other Career
  • 2014 - , Aichi University of Education Vice President for Global Integration Projects
Overseas Education
  • 1993-1994 , University of Cincinnati, Nano-Lab

Research

Books, Articles, etc.

Articles
  • Hideki Shimizu and Takashi Watanabe
    Effects of propane on low temperature growth of 3C-SiC films on Si (111) by plasma assisted CVD
    Materials Science Forum, Trans Tech Publication, Switzerland, 717-720:181-184, 2012-06
  • H. Shimizu
    Manufacturing a Product Using Electromagnetic Force as Part of "Making things" Education
    Proceedings of ICTE 2011, ICTE, :57-63, 2012-03
  • Hetero-epitaxial of 3C-SiC on Carbonized Silicon Substrates
    Material Science Forum, Trans Tech Publication, Switzerland, 433-436:229-232, 2003-06
  • Evaluation of Carbonized Layers for 3C-SiC/Si Epitaxial Growth by Ellipsometry
    Materials Science Forum, Trans Tech Publication, Switzerland, 389-393:335-338, 2002-04
  • Structural Changes due to Gass Pressure of Diamond Films Prepared by Intermitted Plasma Chemical Vapor Depsition
    New Diamond and Frontier Carbon Technology, 12(3):133-136, 2002-03
  • Cabonization on(100)Silicon for Heteroepitaxial Growth of 3C-SiC
    Materials Science Forum, Trans Tech Publication, Switzerland, 338-342:261-264, 2000-03
  • Effect of Substrate Bias on 3C-Sic Deposition on Si by AC Plasma-Assisted CVD.
    Materials Science Forum, Trans Tech Publications, switzerland, 264-268:211-214, 1998-03
  • Low temperature and large-area deposition of 3C-Sic on Siby AC plasma-assisted CUD.
    Inst. Phys. Conf. Ser., IOP Publishing Ltd, 142:161-164, 1996-02
  • AC plasma-assisted CVD of 3C-SiC films at low substrate temperature.
    Inst. Phys. Conf. Ser., IOP Publishing Ltd, 137:87-89, 1994-07
  • AC Plasma-Assisted Chemical Vapor Deposition of Cubic Silicon Carbide on Silicon Substrate.
    Springer Proceedings in Physics, Springers, 71:119-125, 1992-05
  • Deposition of Diamond onto an Aluminum Substrate by DC Plasma CVD.
    Jpn. J. Appl. Phys., JSAP, 29(8):1511-1514, 1990-08
  • DIAMOND STRUCTURE IN FILMS DEPOSITED AT RELATIVELY LOW SUBSTRATE TEMPERATURE.
    J. Crystal Growth, North-Holland, 99:1215-1219, 1990-02
  • MICROSTRUCTURES OF HYDROGENATED AMORPHOUS CARBON FILMS PREPARED BY PLASMA CVD.
    J. Non-Cryst. Solid., North-Holland, 114:196-198, 1989-08
  • Microstructures of Hydrogenated Silicon Films Prepared by Ion Plating.
    Jpn. J. Appl. Phys., JSAP, 25(6):775-778, 1986-06
  • FORMATION OF MICROCRYSTALLINE STRUCTURE IN a-Si : H FILMS PREPARED BY RF SPUTTERING.
    J. Non-Cryst. Solid. , North-Holland, 59-60:823-826, 1983-08
  • Microstructures and Hydrogen bonding Environments of a-Si : H Films Prepared by RF Spattering in Pure Hydrogen.
    Jpn. J. Appl. Phys., JSAP, 22(2):L73-L75, 1983-02
  • OPTICAL PROPERTIES OF NATIVE OXIDE FILM ANODICALLY GROWN ON PbSnTe.
    Surface Science, North-Holland, 86:389-397, 1979-08
  • ELLIPSOMETTRIC AND INFRARED SPECTROSCOPIC STUDIES OF OXIDE FILM ON GaAs SURFACE.
    Surface Science, North-Holland, 86:314-321, 1979-08

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