Researcher Directory | Aichi University of Education.


detailes

Iwayama Tsutomu

  • Faculty:Department of Science EducationPosition:Professor Vice President
  • Address:1 Hirosawa,Igaya-cho,Kariya-shi,Aichi
  • TEL:+81-566-26-2637FAX:+81-566-26-2637
  • E-mail address:tiwayamaauecc.aichi-edu.ac.jp
  • Web site:
Modified:05/08/2018

Profile

Assigned Class

  • Natural Sciences

Research Field

  • Nano Materials
  • Physical Properties of Solids
  • Ion and/or Laser Beam
  • Keywords:Semiconductor Physics , Ion Beam , Laser Beam , Silicon Photonics , Materials Science

Current Subject

  • Optical properties of semiconductor nanocrystals
    Keywords:Silicon , Nanocrystals
  • Ion and/or Laser irradiation effects on materials
    Keywords:Ion implantation , PLD

Academic Societies

Academic Societies
  • The Japan Society of Applied Physics
  • The Physical Society of Japan
  • European Materials Research Society
  • Materials Reaearch Society
  • European Physical Society

Academic Background

Graduate School
  • Nagoya University , 1990(Accomplished credits for doctoral program)
  • Nagoya Institute of Technology , 1987(Completed)
College
  • Waseda University , 1984(Graduated)
Degree
  • PhD , Nagoya University

Research Career

Research Career
  • 2007 - , Aichi Univ. of Edu., Prof.
  • 1998 - 1999 , Univ. Colleg. London, U.K., Visit. Acad.
  • 1996 - 1997 , Univ. of Sussex, U.K., Res. Fellow
  • 1993 - 2007 , Aichi Univ. of Edu., Assoc. Prof.
  • 1990 - 1992 , Aichi Univ. of Edu., Res. Assoc.
Other Career
  • 2006 - 2010 , Shibaura Institute of Tech., Res. Fellow
Overseas Education
  • 1998-1999 , Univ. Colleg. London, U.K., Visit. Acad.
  • 1996-1997 , Univ. of Sussex, U.K., Res. Fellow

Research

Books, Articles, etc.

Articles
  • Si nanocrystals formation in SiO2 by ion implantation: The effects of RTA and UV irradiation on photoluminescence
    Vacuum, Elsevier Ltd., 86(10):1634-1637, 2012
  • Influence of UV irradiation and RTA process on optical properties of Si implanted SiO2
    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Elsevier B.V., 268(19):3203-3206, 2010
  • Low temperature formation of luminescent Si nanocrystals with combined process of excimer UV-light irradiation and RTA
    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Elsevier B.V., 267(8-9):1328-1331, 2009
  • Lamp annealing effects on the formation process of implanted silicon nanocrystals in SiO2
    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Elsevier B.V., 257(1-2):85-89, 2007
  • Enhanced luminescence from encapsulated silicon nanocrystals in SiO2 with rapid thermal anneal
    Vacuum, Elsevier Ltd., 81(2):179-185, 2006
  • Laser photolysis studies of the reaction of chromium(III) octaethylporphyrin complex with triphenylphosphine and triphenylphosphine oxide
    Inorganic Chemistry, ACS Publications, 44(18):6445-6455, 2005
  • Correlation of the optical properties with the microstructure of Si nanocrystals in SiO2 fabricated by ion implantation
    Proceedings of SPIE - The International Society for Optical Engineering, SPIE, 5024:24-32, 2003
  • Luminescence from erbium-doped silicon nanocrystals in silica: Excitation mechanisms
    Journal of Applied Physics, AIP, 91(1):367-374, 2002
  • Characteristic photoluminescence properties of Si nanocrystals in SiO2 fabricated by ion implantation and annealing
    Solid-State Electronics, Elsevier Ltd., 45(8):1487-1494, 2001
  • Broad-band and flashlamp pumping of 1.53 μm emission from erbium-doped silicon nanocrystals
    Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Elsevier Science B.V., 81(1-3):19-22, 2001
  • Characterization of Si nanocrystals grown by annealing SiO2 films with uniform concentrations of implanted Si
    Journal of Applied Physics, AIP, 88(7):3954-3961, 2000
  • Mechanism of photoluminescence of Si nanocrystals in SiO2 fabricated by ion implantation: The role of interactions of nanocrystals and oxygen
    Journal of Physics Condensed Matter, IOP Publishing, 11(34):6595-6604, 1999
  • Evidence of energy coupling between Si nanocrystals and Er3+ in ion-implanted silica thin films
    Applied Physics Letters, AIP, 75(14):2011-2013, 1999
  • Optical properties of silicon nanoclusters fabricated by ion implantation
    Journal of Applied Physics, AIP, 83(11):6018-6022, 1998
  • Visible photoluminescence from silicon nanocrystals formed in silicon dioxide by ion implantation and thermal processing
    Thin Solid Films, Elsevier Science B.V., 276(1-2):104-107, 1996
  • Correlation of microstructure and photoluminescence for nanometer-sized Si crystals formed in an amorphous SiO2 matrix by ion implantation
    Nanostructured Materials, Elsevier Science, 5(3):307-318, 1995
  • Visible photoluminescence in Si+-implanted silica glass
    Journal of Applied Physics, AIP, 75(12):7779-7783, 1994
  • Visible photoluminescence in Si+-implanted thermal oxide films on crystalline Si
    Applied Physics Letters, AIP, 65(14):1814-1816, 1994
  • Excitons in crystalline and amorphous SiO2: formation, relaxation and conversion to Frenkel pairs
    Journal of Non-Crystalline Solids, Elsevier Science B.V., 179:194-201, 1994
  • Photoluminescence from nanoparticles of silicon embedded in an amorphous silicon dioxide matrix
    Journal of Physics: Condensed Matter, IOP Publishing, 6(39):L601-L606, 1994
  • Visible photoluminescence related to Si precipitates in Si +-implanted SiO2
    Journal of Physics: Condensed Matter, IOP Publishing, 5(31):L375-L380, 1993

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