Tsutomu Iwayama
TEL: 0566-26-2731 or 2637 FAX: 0566-26-2500 or 2637
E-mail: tiwayama
auecc.aichi-edu.ac.jp


Profile
Department
Natural Sciences, Science Education
Position
Provost
Academic Background
1987-1990, Nagoya University, Graduate School of Science, Accomplished credits for doctoral program
1984-1987, Nagoya Institute of Technology, Graduate School of Engineering, Completed
1980-1984, Waseda University, Faculty of Science and Engineering, Department of Physics, Graduated
Degree
PhD, Nagoya University
Research Career
2007, Aichi University of Education Professor
2006-2010, Shibaura Institute of Technology, Research Organization for Advanced Engineering Visiting Research Fellow
1998-1999, University College London, UK Visiting Academic
1996-1997, University of Sussex, UK Visiting Research Fellow
1993-2007, Aichi University of Education Associate Professor
1990-1992, Aichi University of Education Research Associate
SDGs Related to Research




Research
Research Field
Semiconductor Physics
Ion and/or Laser Beam
Nano Materials
Physics Education
Keywords: Semiconductor Nanocrystals, Functional Thin Films, Ion Implantation, Pulsed Laser Deposition, Physics Education Materials
Current Subject:
Ion and/or laser irradiation effects, Thin film growth
Optical properties of semiconductor nanocrystals
Development of physics teaching materials and applications
Academic Paper
Cambodian STEM pre-service teachers’ competency in effective information communication technology integration teaching based on technological pedagogical content knowledge framework
Journal of Science and Education, CV Rezki Media, Vol. 4, No. 2, pp. 97-108, 2024Utilizing Reactant-Infused Agar Gel to Model the Effect of Solid Reactant Particle Size on Reaction Rate
Journal of Chemical Education, ACS (American Chemical Society) and Division of Chemical Education Inc, Vol. 101, No. 9, pp. 3944-3948, 2024Exploring Electrical Resistance Shape Dependence through Inquiry-Based Learning: A Carbon Nanotube Approach
International Journal of Innovation in Science and Mathematics Education, The University of Sydney, Vol. 32, No. 1, pp. 52-65, 2024Development of Acid-Base Indicators from Natural Pigments in Agar Gel
Journal of Chemical Education, ACS (American Chemical Society) and Division of Chemical Education Inc, Vol. 100, No. 12, pp. 4707-4713, 2023Investigating the properties of conductive clay and examining its potential as a teaching material
Physics Education, IOP (Institute of Physics) Publishing Ltd, Vol. 58, No. 5, pp. 55011, 2023Examining Cambodian high school science teachers’ perception of Technological Pedagogical Content Knowledge (TPACK)
Journal of Science and Education, CV Rezki Media, Vol. 4, No. 1, pp. 1-13, 2023Investigation of pendulum damping using an angle sensor and video analysis: Combination of viscous and dry friction
Physics Education, IOP (Institute of Physics) Publishing Ltd, Vol. 57, No. 6, pp. 65026, 2022STEM integrated approach in improving students’ physics conceptual understanding
愛知教育大学研究報告自然科学編, 愛知教育大学, Vol. 70, pp. 33-41, 2021Using simplified ripple tank and video analysis to visualise and quantify the Doppler effect
Physics Education, IOP (Institute of Physics) Publishing Ltd, Vol. 56, No. 4, pp. 45021, 2021Analysis of interference patterns using a simplified ripple tank, a smartphone camera and Tracker
Physics Education, IOP (Institute of Physics) Publishing Ltd, Vol. 56, No. 6, pp. 65025, 2021Electrical resistor and capacitor using carbon-based papers for creative thinking to deepen and extend learning
Physics Education, IOP (Institute of Physics) Publishing Ltd, Vol. 56, No. 3, pp. 35006, 2021Optical properties of Si nanocrystals in SiO2 matrix synthesized by reactive pulsed laser deposition
Journal of Physics: Conference Series, IOP (Institute of Physics) Publishing Ltd, Vol. 1527, pp. 12027, 2020Methods for teaching light wavelength dependencies on seed germination and seedling elongation applicable for high school experimental class in developing countries
教科開発学論集, 愛知教育大学大学院・静岡大学大学院教育学研究科共同教科開発学専攻, Vol. 8, pp. 105-115, 2020Development of an LED-Attached Box for Phytochrome Response Experiments on Lettuce Seed Germination in Senior High School Biology
The Asian Journal of Biology Education, Asian Association for Biology Education, Vol. 12, pp. 17-28, 2020Luminescent Si nanocrystals synthesized by Si ionimplantation and reactive pulsed laser deposition: The effects of RTA, excimer-UV and e-beam irradiation
International Journal of Chemical, Molecular, Nuclear, Materials and Metallurgical Engineering, World Academy of Science, Engineering and Technology, Vol. 9, No. 8, pp. 468-471, 2015Si nanocrystals formation in SiO2 by ion implantation: The effects of RTA and UV irradiation on photoluminescence
Vacuum, Elsevier Ltd, Vol. 86, No. 10, pp. 1634-1637, 2012Excimer UV-light irradiation effects on the initial formation process of implanted luminescent Si nanocrystals
Transactions of the Materials Research Society of Japan, Materials Research Society of Japan, Vol. 35, No. 4, pp. 765-768, 2010Low temperature formation of luminescent Si nanocrystals with combined process of excimer UV-light irradiation and RTA
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Elsevier B.V., Vol. 267, No. 8-9, pp. 1328-1331, 2009RTA effects on the formation process of embedded luminescent Si nanocrystals in SiO2
Microelectronics Reliability, Elsevier Ltd, Vol. 47, No. 4-5, pp. 781-785, 2007Enhanced luminescence from encapsulated silicon nanocrystals in SiO2 with rapid thermal anneal
Vacuum, Elsevier Ltd, Vol. 81, No. 2, pp. 179-185, 2006Laser photolysis studies of the reaction of chromium(III) octaethylporphyrin complex with triphenylphosphine and triphenylphosphine oxide
Inorganic Chemistry, ACS (American Chemical Society) Publications, Vol. 44, No. 18, pp. 6445-6455, 2005Correlation of the optical properties with the microstructure of Si nanocrystals in SiO2 fabricated by ion implantation
Proceedings of SPIE - The International Society for Optical Engineering, SPIE (the international society for optics and photonics), Vol. 5024, pp. 24-32, 2003Optical and structural properties of encapsulated Si nanocrystals formed in SiO<sub>2</sub> by ion implantation
Surface and Coatings Technology, Elsevier Science B.V., Vol. 158-159, pp. 712-718, 2002Luminescence from erbium-doped silicon nanocrystals in silica: Excitation mechanisms
Journal of Applied Physics, AIP (American Institute of Physics) Publishing, Vol. 91, No. 1, pp. 367-374, 2002Flashlamp pumping of erbium‐doped silicon nanoclusters
Applied Organometallic Chemstry, John Wiley & Sons, Inc., Vol. 15, No. 5, pp. 352-358, 2001Broad-band and flashlamp pumping of 1.53 μm emission from erbium-doped silicon nanocrystals
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Elsevier Science B.V., Vol. 81, No. 1-3, pp. 19-22, 2001Characteristic photoluminescence properties of Si nanocrystals in SiO2 fabricated by ion implantation and annealing
Solid-State Electronics, Pergamon Press (Elsevier Science Ltd), Vol. 45, No. 8, pp. 1487-1494, 2001Characteristic photoluminescence band in Si-implanted SiO2 grown on Si wafer
Microelectronics Reliability, Pergamon Press (Elsevier Science Ltd), Vol. 40, pp. 849-854, 2000Photoluminescence characterization of Er3+-implanted silica thin films containing Si nanocrystals
Proceedings of SPIE - The International Society for Optical Engineering, SPIE (the international society for optics and photonics), Vol. 3942, pp. 97-105, 2000Characterization of Si nanocrystals grown by annealing SiO2 films with uniform concentrations of implanted Si
Journal of Applied Physics, AIP (American Institute of Physics) Publishing, Vol. 88, No. 7, pp. 3954-3961, 2000Characterisation of silicon nanocrystals in silica and correlation with luminescence
Institute of Physics Conference Series, IOP (Institute of Physics) Publishing Ltd, Vol. 161, No. 11, pp. 589-592, 1999Evidence of energy coupling between Si nanocrystals and Er3+ in ion-implanted silica thin films
Applied Physics Letters, AIP (American Institute of Physics) Publishing, Vol. 75, No. 14, pp. 2011-2013, 1999Mechanism of photoluminescence of Si nanocrystals in SiO2 fabricated by ion implantation: The role of interactions of nanocrystals and oxygen
Journal of Physics: Condensed Matter, IOP (Institute of Physics) Publishing Ltd, Vol. 11, No. 34, pp. 6595-6604, 1999Optical properties of silicon nanoclusters fabricated by ion implantation
Journal of Applied Physics, AIP (American Institute of Physics) Publishing, Vol. 83, No. 11, pp. 6018-6022, 1998Visible photoluminescence from silicon nanocrystals formed in silicon dioxide by ion implantation and thermal processing
Thin Solid Films, Elsevier Science B.V., Vol. 276, No. 1-2, pp. 104-107, 1996Luminescent nanometer-sized Si crystals formed in an amorphous silicon dioxide matrix by ion implantation and annealing
Materials Research Society Symposium Proceedings (Symposium Q – Film Synthesis and Growth Using Energetic Beams) , MRS (Materials Research Society), Vol. 388, pp. 253-258, 1995Silicon nanoparticle formation in Si<sup>+</sup>-implanted thermal oxide films and visible photoluminescence behavior
Japanese Journal of Applied Physics, The Japan Society of Applied Physics, Vol. 34, No. Sup34-1, pp. 86-88, 1995Correlation of microstructure and photoluminescence for nanometer-sized Si crystals formed in an amorphous SiO2 matrix by ion implantation
Nanostructured Materials, Pergamon Press (Elsevier Science Ltd), Vol. 5, No. 3, pp. 307-318, 1995Anomalous defect processes in Si implanted amorphous SiO2, II
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Elsevier Science B.V., Vol. 91, No. 1-4, pp. 418-421, 1994Excitons in crystalline and amorphous SiO2: formation, relaxation and conversion to Frenkel pairs
Journal of Non-Crystalline Solids, Elsevier Science B.V., Vol. 179, pp. 194-201, 1994Photoluminescence from nanoparticles of silicon embedded in an amorphous silicon dioxide matrix
Journal of Physics: Condensed Matter, IOP (Institute of Physics) Publishing Ltd, Vol. 6, No. 39, pp. 601-606, 1994Visible photoluminescence in Si+-implanted silica glass
Journal of Applied Physics, AIP (American Institute of Physics) Publishing, Vol. 75, No. 12, pp. 7779-7783, 1994Visible photoluminescence in Si+-implanted thermal oxide films on crystalline Si
Applied Physics Letters, AIP (American Institute of Physics) Publishing, Vol. 65, No. 14, pp. 1814-1816, 1994Investigations on the formation of SiO2 in Si+-implanted Al2O3
Japanese Journal of Applied Physics, The Japan Society of Applied Physics, Vol. 32, No. 10A, pp. 1451-1453, 1993Visible photoluminescence related to Si precipitates in Si+-implanted SiO2
Journal of Physics: Condensed Matter, IOP (Institute of Physics) Publishing Ltd, Vol. 5, No. 31, pp. 375-380, 1993Effects of proton implantation on amorphous SiO<sub>2</sub> predamaged by Si implantation
Japanese Journal of Applied Physics, The Japan Society of Applied Physics, Vol. 24, No. 10, pp. 1846-1848, 1990Reply to ‘‘Comment on ‘Laser‐induced reemission of silicon atoms implanted into quartz’ ’’
Journal of Applied Physics, AIP (American Institute of Physics) Publishing, Vol. 66, No. 11, pp. 5661, 1989Anomalous defect processes in silicon-implanted SiO2
Japanese Journal of Applied Physics, The Japan Society of Applied Physics, Vol. 28, No. 7, pp. 1254-1257, 1989Evidence for solid-phase migration of Si atoms in laser-irradiated, Si+-implanted SiO2
Journal of Physics: Condensed Matter, IOP (Institute of Physics) Publishing Ltd, Vol. 1, No. 32, pp. 5521-5526, 1989